2SK4067 no. a0565-1/4 features motor drive applications. 4.5v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 30 v gate-to-source voltage v gss 20 v drain current (dc) i d 8a drain current (pulse) i dp pw 10 s, duty cycle 1% 32 a allowable power dissipation p d 1w t c=25 c10w channel temperature tch 150 c storage temperature tstg - -55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate-to-source leakage current i gss v gs = 16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.5 2.5 v forward transfer admittance ? yfs ? v ds =10v, i d =4a 2.6 4.4 s static drain-to-source on-state resistance r ds (on)1 i d =8a, v gs =10v 85 115 m ? r ds (on)2 i d =4a, v gs =4.5v 155 220 m ? input capacitance ciss v ds =10v, f=1mhz 260 pf output capacitance coss v ds =10v, f=1mhz 65 pf reverse transfer capacitance crss v ds =10v, f=1mhz 40 pf marking : k4067 continued on next page. tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : ena0565 any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before using any sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. d2006pa ti im tb-00002394 sanyo semiconductors d ata sheet 2SK4067 n-channel silicon mosfet general-purpose switching device applications
2SK4067 no. a0565-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit t urn-on delay time t d (on) see specified test circuit. 9 ns rise time t r see specified test circuit. 8 ns t urn-off delay time t d (off) see specified test circuit. 19 ns fall time t f see specified test circuit. 8 ns t otal gate charge qg v ds =10v, v gs =10v, i d =8a 6 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =8a 1.2 nc gate-to-drain ?iller?charge qgd v ds =10v, v gs =10v, i d =8a 1.0 nc diode forward voltage v sd i s =8a, v gs =0v 1.05 1.2 v package dimensions package dimensions unit : mm (typ) unit : mm (typ) 7518-004 7003-004 switching time test circuit 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : gate 2 : drain 3 : source 4 : drain sanyo : tp-fa 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : gate 2 : drain 3 : source 4 : drain sanyo : tp pw=10 s d.c. 1% 10v 0v v in p. g 50 ? g s i d =3.5a r l =4.3 ? v dd =15v v out v in d 2SK4067
2SK4067 no. a0565-3/4 drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- m ? static drain-to-source on-state resistance, r ds (on) -- m ? drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v source current, i s -- a gate-to-source voltage, v gs -- v i d -- v ds i d -- v gs r ds (on) -- v gs r ds (on) -- ta i s -- v sd ? y fs ? -- i d drain current, i d -- a switching time, sw time -- ns sw time -- i d drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it11830 it11832 - -60 --40 --20 0 20 40 60 80 100 120 140 160 0 5.5 3.0 5.0 4.5 4.0 3.5 2.5 2.0 1.5 1.0 0.5 06 5 13 24 0 300 250 100 200 150 50 v ds =10v it11834 0.2 0.4 0.6 0.8 1.4 1.2 1.0 0.01 0.1 10 7 5 3 2 7 5 3 2 2 1.0 7 5 3 it11833 25 c - -25 c t c=75 c 0.01 0.1 1.0 23 57 23 57 23 57 10 2 0.1 1.0 5 7 3 2 2 10 5 7 3 v ds =10 v t a= -- 25 c 75 c v gs =0v t a= --25 c t a=75 c 25 c 75 c - -25 c i d =8a, v gs = 10.0 v i d =4a, v gs = 4.5 v it11835 1.0 10 3 2 2 5 7 100 3 5 7 0.1 1.0 23 57 23 5 10 7 v dd =15v v gs =10v t d (off) t r t f t d (on) 0 7 100 10 1000 5 3 2 7 5 3 2 52535 15 10 30 20 it11836 f=1mhz ciss coss crss 25 c 25 c ambient temperature, ta -- c it11829 it11831 0 0 8 6 7 5 4 3 0.2 1.0 0.1 0.7 0.8 0.9 0.5 0.3 0.4 0.6 2 1 8.0v 6.0v 4.5v 4.0v 10.0v v gs =2.5v 3.0v 2 0 300 250 200 150 10 89 36 5 47 100 50 i d =4a 8a ta =25 c
2SK4067 no. a0565-4/4 ps specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. note on usage : since the 2SK4067 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. this catalog provides information as of december, 2006. specifications and information herein are subject to change without notice. 2 3 5 7 2 0.1 3 5 7 2 1.0 3 5 7 2 10 3 7 5 0.01 23 57 2 0.01 0.1 357 2 1.0 357 2 10 35 it11839 it11837 it11841 it11840 0 0 20 40 0.4 0.2 60 1.0 0.8 0.6 80 100 120 1.2 140 160 operation in this area is limited by r ds (on). 100 s 1ms 10ms i d =8a i dp =32a dc operation 0 0 20 40 4 2 60 10 8 6 80 100 120 12 140 160 0 0 2 4 6 8 7 10 123456 v ds =10v i d =8a 100ms 10 s t otal gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w a s o v gs -- qg p d -- ta p d -- tc t c=25 c single pulse
|
